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NASA’s innovative passivation process consists of exposing in-situ Physical Vapor Deposited oxide-free AI samples in a high or ultra-high vacuum chamber at ambient temperature to a low-pressure reactive gas of xenon difluoride (XeF2) immediately after depositing the AI layer. In this chemisorption process, the XeF2 is adsorbed on the surface of the AI layer, and due to the affinity of Al to fluorine molecules, the weakly-bound Xe dissociates and is pumped out of the chamber. A thin AlF3 overcoat layer is produced as a result. Other embodiments of the invention include the use of alternative processing gasses for the passivation treatment, or the utilization of a plasma source to increase the ion/atom ratio of the incident fluorine species resulting after XeF2 dissociation. Similarly, different mirror substrates materials with suitable surface characteristics in the FUV could be employed. In addition to the improved FUV reflectance, environmental stability, and maintained efficiency at higher wavelengths of the resulting Al mirrors, this NASA process has several unique features. Firstly, the entire process is carried out at ambient temperature, eliminating the need for high-temperature fluoride deposition. Secondly, the process is highly scalable, limited only by the size of the coating chamber where the passivation of XeF2 is carried out. Finally, the process can be manipulated to conform to any geometry, enabling its use for curved optics. While NASA originally developed the passivation of oxide-free aluminum coatings to realize reflectivity enhancement in the Far-Ultraviolet for the Large UV/Optical/IR Surveyor (LUVOIR), it may also be useful to companies that manufacture ground-based or space-based optical systems with sensitivity to the FUV spectrum. Examples include optics for space telescopes with reflective elements, vacuum-ultraviolet (VUV) plasma analysis tools, photolithography instrumentation, and wafer inspection tools.

Fabrication of NASA's pupil mask begins with the preparation of a silicon wafer, which serves as the foundation for the black silicon structure. The wafer undergoes ion beam figuring (IBF), a non-contact technique that precisely removes surface irregularities at the nanometer scale. This process ensures that the silicon surface is diffraction-limited, eliminating errors that could degrade optical performance. Once the wafer is polished to the required precision, it is then processed lithographically to define the mask pattern, creating reflective and absorptive regions essential for controlling light propagation. To achieve the desired high absorption characteristics, the lithographically patterned wafer undergoes cryogenic etching, a sophisticated process that transforms the silicon surface into a highly textured, black silicon structure. This method utilizes a controlled plasma environment with sulfur hexafluoride (SF6) and oxygen to etch the surface at cryogenic temperatures. The process is carefully optimized by adjusting parameters such as gas flow rates, chamber pressure, ion density, and etch duration, leading to the formation of high-aspect-ratio nanostructures on the silicon substrate. These structures, resembling a dense “forest” of silicon nanospikes, trap and diffuse incoming light, drastically reducing specular reflection. The resulting surface exhibits an ultra-low reflectivity that is orders of magnitude lower than conventional polished silicon. By leveraging NASA’s cutting-edge fabrication technique, the newly developed black silicon pupil mask offers a powerful solution for high-contrast astronomical imaging. Its ability to minimize scattered light and enhance optical contrast makes it an ideal component for space telescopes tasked with directly imaging exoplanets as well as other applications requiring ultra low reflectivity systems.